Apr 23, 2025 Single neuromorphic transistor integrates sensing memory and learning for efficient artificial vision A layered transistor design combines light detection optical memory and neuromorphic ...

A universal drain current model for multiple-gate field-effect transistors (FETs) (Mug-FETs) is proposed. In Part I, a universal charge model was derived using the arbitrary potential method. Using ...

It's time to dig inside to understand how the internal CPU components are designed. We'll discuss transistors, logic gates, power and clock delivery, design synthesis, and verification.

By Victor Moroz and Shela Aboud The transition from finFET technology to Gate-All-Around (GAA) technology helps to reduce transistor variability and resume channel length scaling. It also brings ...

For example, an AND gate outputs 1 (true) only if both inputs are 1, otherwise it outputs 0 (false). You can use transistors to implement logic gates by connecting them in different configurations.

By combining multiple transistors in specific configurations, we can create logic gates, which are capable of performing basic logical operations like AND, OR, and NOT.

This whitepaper gives a compact overview of the recommended gate drive concepts for both GIT (gate injection transistor) and SGT (Schottky gate transistor) product families. A versatile standard drive ...

This article discusses the fundamentals of MOSFET transistors, their operational principles, and their distinct advantages over other transistor technologies. By highlighting the unique ...

Transistor advances have gone through several stages over the years, each driven by the need to meet new demands in terms of size, performance, and power consumption.

By combining the basic device equations of metal-oxide-semiconductor field-effect transistors with the polarization retention characteristics of ferroelectric thin films, a retention model for ...

What makes these GaN devices special is their low ‘on’ resistance and very low gate capacitance. The low on resistance and low gate-drive capacitance makes it possible for GaN devices to switch ...

Creating sub-1-nm gate lengths for MoS2 transistors by Bob Yirka , Tech Xplore The 0.34 nm gate-length side-wall monolayer MoS2 transistor device structure and characterization. Credit: Nature (2022).